PART |
Description |
Maker |
NTE1854M NTE1854D |
3/4 Pin 500mA Adjustable Positive Voltage Regulator 3-PFM 0 to 125 Integrated Circuit Dual Power Operational Amplifie
|
NTE Electronics, Inc. NTE[NTE Electronics]
|
HMC482ST89E |
SiGe HBT GAIN BLOCK MMIC AMPLIFIE /DC - 5.0 GHz
|
Hittite Microwave Corporation
|
MTD6P10E ON2515 MTD6P10E-T4 |
6 A, 100 V, 0.66 ohm, P-CHANNEL, Si, POWER, MOSFET TMOS POWER FET 6.0 AMPERES 100 VOLTS RDS(on) = 0.66 OHM From old datasheet system
|
Motorola Mobility Holdings, Inc. Motorola, Inc. MOTOROLA[Motorola, Inc]
|
APT20M22LVFR APT20M22LVFRG |
Power FREDFET; Package: TO-264 [L]; ID (A): 100; RDS(on) (Ohms): 0.022; BVDSS (V): 200; 100 A, 200 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 200V 100A 0.022 Ohm
|
Microsemi, Corp. Advanced Power Technology
|
NTD6600N NTD6600N-1 NTD6600N-1G NTD6600NT4 NTD6600 |
Power MOSFET 100 V, 12 A, N−Channel, Logic Level DPAK Power MOSFET 100 V, 12 A, N-Channel, Logic Level DPAK; Package: DPAK 4 LEAD Single Gauge Surface Mount; No of Pins: 4; Container: Tape and Reel; Qty per Container: 2500 12 A, 100 V, 0.146 ohm, N-CHANNEL, Si, POWER, MOSFET
|
ON Semiconductor
|
NMA5107-B1M |
High Power Broadband Noise Sources 100 Hz to 100 MHz
|
http://
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AIF50B300 AIF120F300 AIF AIF80A300 AIF25H300 AIF12 |
Embedded Power for Business-Critical Continuity 600W Continuous power at 100°C baseplate temperature 600W Continuous power at 100∑C baseplate temperature 1-OUTPUT 600 W DC-DC REG PWR SUPPLY MODULE
|
Astec America, Inc Emerson Network Power
|
8485A 8485D Q8486D W8486A R8486A Q8486A R8486D E44 |
8485A Power Sensor, 50 MHz to 26.5 GHz 8485D Diode Power Sensor, 50 MHz to 26.5 GHz Q8486D Waveguide Power Sensor, 33 GHz to 50 GHz W8486A Waveguide Power Sensor, 75 GHz to 110 GHz R8486A Thermocouple Waveguide Power Sensor, 26.5 GHz to 40 GHz Q8486A Thermocouple Waveguide Power Sensor, 33 GHz to 50 GHz R8486D Waveguide Power Sensor, 26.5 GHz to 40 GHz E4412A Wide Dynamic Range Power Sensor, E-Series E4413A Wide Dynamic Range Power Sensor, E-Series V8486A V-band Power Sensor, 50 GHz to 75 GHz 8482B High-Power Sensor, 100 kHz to 4.2 GHz, 25W 8487A Power Sensor, 50 MHz to 50 GHz 8482H Power Sensor, 100 kHz to 4.2 GHz, 3 W 8481D Diode Power Sensor, 10 MHz to 18 GHz
|
Agilent (Hewlett-Packard)
|
MBR30H100CT |
SWITCHMODE Power Rectifier 100 V, 30 A(100V,30A开关模式功率整流器) 15 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB
|
ON Semiconductor
|
IRF520 IRF120 IRF120-123 IRF121 IRF122 IRF123 MTP1 |
N-Channel Power MOSFETs, 11 A, 60-100 V N沟道功率MOSFET1日,60-100 V N-Channel Power MOSFETs/ 11 A/ 60-100 V N-Channel Power MOSFETs 11 A 60-100 V
|
Fairchild Semiconductor, Corp. Fairchild Semiconductor Corporation FAIRCHILD[Fairchild Semiconductor]
|